| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD-SiC self-supported film structure which restrains deformation such as a warp, improves mechanical strength, is superior in durability, can prevent occurance of foreign particles and is suitable for a semiconductor manufacturing apparatus. SOLUTION: In the CVD-SiC self-supported film structure which is a CVD-SiC compact having a SiC film 2 formed by a CVD method on both surfaces of a SiC substrate 1 formed by the CVD method, an interface of the SiC substrate 1 and the SiC film 2 has such a structure that a SiC crystal 2a composing the SiC film digs into the SiC substrate 1 to a shape of a wedge, a SiC crystal 1a comprising the SiC substrate has an average particle diameter of 15μm or less, and the SiC crystal 2a composing the SiC film has the average particle diameter of 20μm or more but 40μm or less on the interface, and has the average particle diameter of 40μm or more but 200μm or less on the surface of the film.
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