SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology which avoids leaving unpolished portions of a Cu film in a CMP process for forming Cu wirings by the damascene method. SOLUTION: The manufacturing method comprises the steps of: polishing a Cu film with an abrasive-free slurry by a first polishing surface platen of a CMP apparatus 1 and stopping polishing the Cu film at a barrier metal layer; polishing the surface of a semiconductor wafer 6 with a mixture of an abrasive- free slurry and a silica slurry mixed irumediately before use by a second polishing surface platen 3 to remove the Cu film locally remaining unpolished in the first step; and polishing the barrier metal layer in other regions than wiring grooves with a silica slurry by a third polishing surface platen 4; and forming Cu wirings in the wiring grooves.