发明名称 USE OF AlN AS COPPER PASSIVATION LAYER AND THERMAL CONDUCTOR
摘要 A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer.
申请公布号 KR20030030989(A) 申请公布日期 2003.04.18
申请号 KR20027013548 申请日期 2001.04.10
申请人 发明人
分类号 H01L21/3205;H01L23/522;H01L21/318;H01L21/768;H01L23/367;H01L23/52;H01L23/532 主分类号 H01L21/3205
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