发明名称 |
USE OF AlN AS COPPER PASSIVATION LAYER AND THERMAL CONDUCTOR |
摘要 |
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer. |
申请公布号 |
KR20030030989(A) |
申请公布日期 |
2003.04.18 |
申请号 |
KR20027013548 |
申请日期 |
2001.04.10 |
申请人 |
|
发明人 |
|
分类号 |
H01L21/3205;H01L23/522;H01L21/318;H01L21/768;H01L23/367;H01L23/52;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|