| 摘要 |
PROBLEM TO BE SOLVED: To provide a drive circuit of a voltage-driven semiconductor switching device which can reduce a turn-on time while an increase in driving power, instabilization of characteristics, and the reduction of an operation life are suppressed to minimum. SOLUTION: This drive circuit of a voltage-driven semiconductor switching device is composed of a primary circuit comprising a parallel circuit of a capacitor 104 which is a capacitance device, a resistor 105 which is a current limiting device and an LED 103 which is a light-emitting device and connected in series to the parallel circuit, and a secondary circuit comprising a solar battery 106 which generates an electromotive force by receiving light energy from the LED 103 and a discharge circuit 107 which, when an n-type MOS-FET 101 is in an on-state, supplies the electromotive force of the solar battery 106 efficiently to the gate of the n-type MOS-FET 101 and, when the n-type MOS-FET 101 is in an off-state, discharges charge accumulated in the solar battery 106 and between the gate and source of the n-type MOS-FET 101 quickly. |
