发明名称 GATE DRIVE CIRCUIT OF VOLTAGE-DRIVEN SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make an actual output voltage match a command voltage of an inverter while the oscillation phenomenon of a voltage waveform, in an antiparallel recovery time of a diode connected in parallel with a device such as an IGBT or the like constituting an inverter or the like, is avoided. SOLUTION: A gate drive circuit of an IGBT comprises a filter circuit 18, a one-shot circuit 20, a logic operation circuit 22, etc. If the pulse period width of a gate command signal is shorter than 1/2 of a minimum off-period T, an off-operation is prohibited by the circuit 18 and, if the pulse period width is T/2-T, an off-period is forcibly changed to be T by the circuit 20, and, if the pulse period width is not shorter than T, the operation is continued as it is.
申请公布号 JP2003116263(A) 申请公布日期 2003.04.18
申请号 JP20010309421 申请日期 2001.10.05
申请人 FUJI ELECTRIC CO LTD 发明人 TAKIZAWA AKITAKE
分类号 H02M1/08;H02M7/5387 主分类号 H02M1/08
代理机构 代理人
主权项
地址