| 摘要 |
PURPOSE: A method for fabricating a nitride semiconductor substrate is provided to obtain a substrate formed with a pure nitride by reducing the contact area of the nitride thin film with the sapphire substrate. CONSTITUTION: The first nitride thin film is formed on the sapphire substrate(100). The first mask pattern is formed on the first nitride thin film in the shape of a stripe. The first nitride thin film is over-etched to a part of the sapphire substrate(100) using the first mask pattern, and the first mask pattern is removed. The second nitride thin film(103) is laterally grown from the lateral side of the first nitride thin film. The second mask pattern is formed on the second nitride thin film(103) over the etched substrate(100) in the shape of a stripe with a protrusion. The first and the second nitride thin films are etched using the second mask pattern such that the first nitride thin film and the substrate(100) contact each other by the area(E) of the protrusion, and then, the second mask pattern is removed. The third nitride thin film(105) is grown from the lateral side of the island of the second nitride thin film(103), and cooled such that the second and the third nitride thin films(103,105) are separated from the substrate(100).
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