发明名称 METHOD OF FABRICATING PIEZOELECTRIC ELEMENT AND DEGREASING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of fabricating a piezoelectric element which can improve uniformity of piezoelectric characteristic. SOLUTION: The method of fabricating a piezoelectric element comprising the processing steps of forming a lower electrode on a substrate, coating the sol of organic metal compound on this lower electrode, forming gelation of sol of this organic metal compound, forming a piezoelectric film by crystallizing the gel of organic metal compound, and forming an upper electrode on the piezoelectric film. Moreover, the processing step to dry the sol of organic metal compound and the step to degrease the sol are also provided, and the organic metal compound is heated with irradiation of the far infrared beam in this degreasing processing step. This far infrared beam is preferably radiated from the side of substrate, and this far infrared beam preferably has the wavelength of 3 μm or more but 5 μm or less. The degreasing apparatus comprises a far infrared beam heater 500.
申请公布号 JP2003115619(A) 申请公布日期 2003.04.18
申请号 JP20010308392 申请日期 2001.10.04
申请人 SEIKO EPSON CORP 发明人 MURAI MASAMI
分类号 B41J2/16;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/145;C04B35/638;H01L41/187;H01L41/22;H01L41/318 主分类号 B41J2/16
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