| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for reducing a non-binding hand and defects at an interface, by reducing the growth of SiO2 layer as an obstacle to the epitaxial growth of a gate insulating film, and preventing dislocation or deficit related to the extension of a lattice constant caused by dislocation of composition or deficit of oxygen. SOLUTION: The semiconductor device includes an element isolation insulating film 102, a gate insulating film 103 on a silicon single-crystal substrate 101, a gate electrode formed on the gate insulating film, and a source and drain region 105 on both sides of the gate insulating film between the element separation insulating film and the gate insulating film. In a vacuum deposition method with a target made of a rare-earth oxide, the gate insulating film 103 is grown through epitaxial in the (100) orientation.
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