| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring structure suited for preventing the deterioration of a gate insulation film and the generation of a leak current caused leeg electric charges in the etching steps of metal wiring layers. SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a cell 10 containing a plurality of transistors for realizing a specified circuit block, a first input wiring pattern 6a formed in the cell for connecting to gate electrodes of transistors at the input stage of the circuit block on a first wiring layer, a second input wiring pattern 6b formed in/outside the cell for connecting to elements outside the cell on the first wiring layer, and a third input wiring pattern 8a formed in the cell for electrically connecting the first input wiring pattern with the second input wiring pattern on a second wiring layer.
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