ONE TIME PROGRAMMABLE UNIT MEMORY CELL BASED ON VERTICAL FUSE AND DIODE AND ONE TIME PROGRAMMABLE MEMORY COMPRISING IT

摘要

PROBLEM TO BE SOLVED: To provide an one time programmable memory which can be programmed by a purchaser with high density at a low cost. SOLUTION: The one time programmable unit memory 100 comprises a vertical fuse 130 and a diode 170 connected in series. The cell 100 can be programmed by applying a critical voltage sufficient for bringing the fuse 130 into an open state across the cell 100. The state is detected by applying a read voltage across the memory cell 100. An intersection memory array can be formed using unit memory cells formed at respective intersections. The memory array can be used as a memory by adding a read/write circuit. Furthermore, a large number of arrays can be stacked in order to form a high density memory device.