| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a withstand voltage can be improved without increasing a collector series resistance and to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises a base region (3) and an emitter region (7) formed in the base region (3) formed on the surface of an epitaxial layer (2) on a semiconductor substrate (1), and a surface silicon oxide film (5) and a metal (6) formed on the surface of the layer (2). The method for manufacturing the semiconductor device comprises the steps of completely penetrating the layer (2) from the surface of the layer (2), and forming a trench (8) so as to be superposed with the outer peripheral part of the base region (3) so as to arrive at the semiconductor substrate (1).
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