| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of negative effects such as the growth of a natural oxide film even in irregular operation. SOLUTION: A multichamber type CVD device has a negative pressure transfer chamber 10 constituted into a load lock chamber structure which resists negative pressure, a negative pressure transfer device 12 which is installed in the negative pressure transfer chamber 10 and transfers a wafer W, a carry-in chamber 20, a carry-out chamber 30 and a buffer chamber 40 constituted into a load lock chamber structure and continuously installed in front of the negative pressure transfer chamber 10, a positive pressure transfer chamber 50 which is constituted to maintain positive pressure, a positive pressure transfer device 52 which is installed in the positive pressure transfer chamber 50 and transfers a wafer W between the carry-in chamber 20, the carry-out chamber 30 and the buffer chamber 40, and a pod-mounting table 61 and a plurality of CVD units 71, 72, 73 and 74 installed in the rear side of the negative pressure transfer chamber 10. Thereby, it is possible, in an irregular operation, to prevent the generation of negative effects, such as the growth of a natural oxide film by storing a wafer W temporarily in the buffer chamber 40 which enables pressure reduction. |
