发明名称 tMART MEMORY
摘要 A smart memory (50) includes a memory array (60) and one or more memory-intensive additional functions, all packaged in a standard memory package that has substantially the same fit and form as a standard integrated-circuit memory (52). One type of smart memory chip is a multi-media RAM (MMRAM) chip that provides on a single integrated-circuit chip a memory array (60) and a compressor / decompressor (CODEC) section (100) where connections between the memory array section (60) and the CODEC section (100) are on the single integrated-circuit die (52). The smart memory eliminates the need for additional special function integrated-circuit packages and significantly reduces the clock rate and the power consumption of a baseband chip in a personal communication device.
申请公布号 WO03005367(A3) 申请公布日期 2003.04.17
申请号 WO2002US20969 申请日期 2002.06.28
申请人 NANOAMP SOLUTIONS, INC. 发明人 CHAN, HUGO, W., K.
分类号 G06K19/07;G11C7/10 主分类号 G06K19/07
代理机构 代理人
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