| 摘要 |
<p>A method of fabricating field-effect transistor having periodically doped channel comprising selecting a wavelength of wave-ordered nanostructure G?2/α2¿ times smaller than the length of the transistor channel, G being the desired gain in transistor transconductance and working frequency due to periodical doping of the channel, α being the ratio of the wavelength to the distance between doped regions; forming a thin layer of screen silicon oxide on the surface of a transistor region of a first conductivity type; depositing a layer of amorphous silicon; sputtering the surface of the amorphous silicon by a flow of nitrogen molecular ions in vacuum so as to form the nanostructure, directing the ion incidence plane along the transistor channel, determining the ion energy and the ion incidence angle to the amorphous silicon surface on the basis of the wavelength of the nanostructure; transforming the nanostructure into the nanomask by reactive-ion plasma; implanting the doping ions so as to form in the channel region of the transistor shallow implants of the second conductivity type identical to that for transistor's source and drain regions and opposite to the first conductivity type; removing nanomask and the screen silicon oxide; forming gate dielectric material, a gate, source and drain regions completing the fabrication of the transistor.</p> |
