Semiconductor laser device, semiconductor laser module, and optical fiber amplifer

摘要

A compressive strain GRIN-SCH-MQW active layer and a tensile strain GRIN-SCH-MQW active layer are laminated, and there are provided a diffraction grating formed in the vicinity of the compressive strain GRIN-SCH-MQW active layer and a diffraction grating formed in the vicinity of the tensile strain GRIN-SCH-MQW active layer, between the radiation end face and the reflection end face of the laser beam. A laser beam obtained by polarization-multiplexing a laser beam in the TE mode generated in the compressive strain GRIN-SCH-MQW active layer and a laser beam in the TE mode generated in the tensile strain GRIN-SCH-MQW active layer, and having a plurality of oscillation longitudinal modes of not larger than a predetermined output value is output by the wavelength selection characteristic of the diffraction gratings.