发明名称 |
INJECTION COLD EMITTER WITH NEGATIVE ELECTRON AFFINITY BASED ON WIDE-GAP SEMICONDUCTOR STRUCTURE WITH CONTROLLING BASE |
摘要 |
A cold electron emitter may include a heavily n+ doped wide band gap (WBG) substrate, a p-doped WBG region, and a low work function metallic layer (n+-p-M structure). A modification of this structure includes heavily p+ doped region between p region and M metallic layer (n+-p-p+-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible because the p-doped (or p+ heavily doped) WBG region acts as a negative electron affinity material when in contact with low work function metals. The injection emitters with the n+-p-M and n+-p-p+-M structures are stable since the emitters make use of relatively low extracting electric field and are not affected by contamination and/or absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.
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申请公布号 |
US2003071554(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20010974818 |
申请日期 |
2001.10.12 |
申请人 |
OSSIPOV VIATCHESLAV V.;BRATKOVSKI ALEXANDRE M.;BIRECKI HENRYK |
发明人 |
OSSIPOV VIATCHESLAV V.;BRATKOVSKI ALEXANDRE M.;BIRECKI HENRYK |
分类号 |
H01J1/308;(IPC1-7):H01J1/00 |
主分类号 |
H01J1/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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