发明名称 |
COPPER INTERCONNECT STRUCTURE HAVING DIFFUSION BARRIER |
摘要 |
The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film (32) combined with an Al intermediate layer (34) is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully. |
申请公布号 |
WO02067319(A3) |
申请公布日期 |
2003.04.17 |
申请号 |
WO2001US47592 |
申请日期 |
2001.12.05 |
申请人 |
ASM MICROCHEMISTRY OY;ASM AMERICA, INC.;KIM, KI-BUM;RAAIJMAKERS, IVO;SOININEN, PEKKA, J. |
发明人 |
KIM, KI-BUM;RAAIJMAKERS, IVO;SOININEN, PEKKA, J. |
分类号 |
C23C16/20;C23C16/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
C23C16/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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