| 摘要 |
<p>A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post-treatment in which the film is exposed to a low-temperature plasma in a high-frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.</p> |
