发明名称 Semiconductor integrated circuit device
摘要 A semiconductor integrated circuit device includes an external connection pad, an electrostatic discharge protection circuit, an output circuit, an output pre-buffer circuit, an output-signal-fixing circuit and an internal circuit. The output-signal-fixing circuit includes a first capacitor and a second capacitor and fixes an output signal from a second pre-buffer circuit at an "L" level (low voltage) even when an output from the internal circuit is in a floating state. During an ESD test, since an output signal from the second pre-buffer circuit is fixed at an "L" level (low voltage) by the output-signal-fixing circuit, the NMIS transistor is in an OFF state. In this manner, a surge current is prevented from flowing locally into the NMIS transistor.
申请公布号 US2003071311(A1) 申请公布日期 2003.04.17
申请号 US20020252709 申请日期 2002.09.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAI KATSUYA;KOHGAMI TOSHIHIRO;USAMI SHIRO
分类号 H01L27/04;H01L21/822;H01L27/02;H03K19/0175;(IPC1-7):H01L23/62 主分类号 H01L27/04
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