Ashing apparatus, ashing methods, and methods for manufacturing semiconductor devices

摘要

A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention includes a step of forming a TiN film 2 on an underlying film 1; a step of coating a photoresist film on the TiN film 2, and exposing and developing the photoresist film; a step of etching the TiN film 2 using the photoresist film 4a as a mask, by using an etching apparatus that etches an Al alloy film; a step of introducing a mixed gas containing O2 gas and N2 gas adjacent to the photoresist film, and plasmatizing the gas to thereby ash the photoresist film, and a step of introducing H2O gas adjacent to the TiN film, and plasmatizing the gas to thereby ash foreign matters on the TiN film.