| 摘要 |
<p>A semiconductor device (10) and method of manufacture. A liner (62) composed of a high-K material having a relative permittivity of greater than eight is formed adjacent at least the sidewalls of a gate (28). Sidewall spacers (66) are formed adjacent the gate and spaced apart from the gate by the liner. The liner can be removed using an etch process that has substantially no reaction with a gate dielectric (34) of the gate.</p> |
