发明名称 |
SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
摘要 |
A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n-1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.
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申请公布号 |
US2003070611(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20020268103 |
申请日期 |
2002.10.10 |
申请人 |
NAKAMURA DAISUKE;ITO TADASHI;KONDO HIROYUKI;NAITO MASAMI |
发明人 |
NAKAMURA DAISUKE;ITO TADASHI;KONDO HIROYUKI;NAITO MASAMI |
分类号 |
C30B23/00;C30B25/00;C30B25/20;C30B33/00;(IPC1-7):C30B23/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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