发明名称 |
Interconnect structure and method of making same |
摘要 |
An interconnect structure having an increased chip connector pad and plated through hole density is provided. In particular, the interconnect structure includes a substrate having at least one plated through hole therein, and a first conductive layer sealing the at least one plated through hole. The substrate includes a layer of dielectric material thereon. The dielectric layer includes at least one aperture selectively positioned directly over the at least one plated through hole. The substrate further includes a metal layer, at least a pair of conductive layers that can carry signals, and at least another pair of conductive layers that can carry power, wherein the pair of conductive layers are shielded by the metal layer and the other pair of conductive layers.
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申请公布号 |
US2003070839(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20010978442 |
申请日期 |
2001.10.16 |
申请人 |
BOYKO CHRISTINA M.;FARQUHAR DONALD S.;PAPATHOMAS KONSTANTINOS I. |
发明人 |
BOYKO CHRISTINA M.;FARQUHAR DONALD S.;PAPATHOMAS KONSTANTINOS I. |
分类号 |
H01L23/498;H01R12/51;H05K1/11;H05K3/42;H05K3/46;(IPC1-7):H05K1/11;H01R12/04 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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