SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS

摘要

A RF switch circuit (20) is fabricated in a silicon-on-insulator "SOI" technology. The RF switch circuit (20) includes pairs of switching and shunting transistor grouping (33, 34, 37, 38) used to alternatively coupled RF input signals (RF1, RF2) to a common RF node (35). The switching and shunting transistor groupings (33, 34, 37, 38) comprise one or more MSFET transistors connected together in o "stacked" or serial configuration. The stacking of transistor groupings( 33, 34), associated gate resistors increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic (110) and a negative voltage generator (120) integrated together with the RF switch elements (30). In one embodiment, the fully integrated RF switch includes a built-in oscillator (202), a charge pump circuit (206), a level shifting, voltage divider circuits (500), and an RF buffer circuit (400). The inventive RF switch (20) provides improvements in insertion loss, switch isolation, and switch compression.