| 发明名称 |
MEMORY CELL STRUCTURAL TEST |
| 摘要 |
An apparatus and method for testing memory cells comprising coupling a first and a second memory cell to a first and a second bit lines, respectively, reading data from the first and second memory cells through the first and second bit lines, and comparing the voltage levels of the first and second bit lines. |
| 申请公布号 |
WO02080183(A3) |
申请公布日期 |
2003.04.17 |
| 申请号 |
WO2002US07340 |
申请日期 |
2002.03.08 |
| 申请人 |
INTEL CORPORATION |
发明人 |
TRIPP, MICHAEL;MAK, TAK;SPICA, MICHAEL |
| 分类号 |
G01R31/28;G11C11/401;G11C11/413;G11C29/02;G11C29/34;G11C29/50 |
主分类号 |
G01R31/28 |
| 代理机构 |
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代理人 |
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| 地址 |
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