| 摘要 |
Provided is an inspection technique of a semiconductor device, enabling an inspection on a wafer being in a process, which cannot be carried out by a conventional technique, to be performed at an early stage, and capable of promptly grasping a problem with accuracy and taking a countermeasure on a manufacturing process immediately. A wafer being in a process is irradiated with an electron beam a plurality of times at predetermined intervals under a condition that a junction is backward biased, and secondary electron signals are monitored, thereby evaluating relax time characteristic of a backward bias potential in a pn junction. Since the potential in the pn junction decreases according to the intensity of a backward bias current in intermittent time, a backward bias current can be specified from a luminance signal of a potential contrast image. By carrying out the inspection method and sequentially repeating an operation of storing the luminance signal, an automatic inspection on a designated region can be carried out. An image in a wafer face and information such as a brightness distribution is automatically stored and output after the inspection.
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