| 摘要 |
1,243,355. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 1 Nov., 1968 [4 Nov., 1967 (2)], No. 51836/68. Heading H1K. The NPN transistor shown is produced with many others in a semi-conductor wafer. The P-type region 7 forms part of a grid produced simultaneously with the base region 3 by a common diffusion step. The peripheral N-type zone 6 forms part of a grid produced simultaneously with the emitter region 5 by a common diffusion step. The zone 6 is of higher conductivity than the collector region 1 and acts as a stopper for any inversion layer extending from +he base region towards the edge of the device. The transistor is separated from its parent wafer by division along the grid lines; these lines were used for process control during manufacture. The method of manufacture is varied in dependence on the use of positive or negative photo-resists during the various process steps. |
