发明名称 |
Method of forming nitridated tunnel oxide barriers for flash memory technology circuitry and STI and LOCOS isolation |
摘要 |
An improved flash memory device, which has shallow trench isolation in the periphery region and LOCOS isolation in the core region is provided. A hard mask is used first to create the shallow trench isolation. The LOCOS isolation is then created. Subsequent etching is used to remove stringers. The flash memory is able to use shallow trench isolation to limit encroachment. The flash memory may also have a nitridated tunnel oxide layer. A hard mask is used to prevent nitride contamination of the gate oxide layer.
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申请公布号 |
US2003073288(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20020295738 |
申请日期 |
2002.11.15 |
申请人 |
PHAM TUAN DUC;RAMSBEY MARK T.;SUN YU;CHANG CHI |
发明人 |
PHAM TUAN DUC;RAMSBEY MARK T.;SUN YU;CHANG CHI |
分类号 |
H01L21/76;H01L21/762;H01L21/8239;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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