发明名称 |
HIGH-Q, VARIABLE CAPACITANCE CAPACITOR |
摘要 |
High-Q, variable capacitance capacitor is formed by including a pocket of semiconductor material; a field insulating layer, covering the pocket; an opening in the field insulating layer, delimiting a first active area; an access region formed in the active area and extending at a distance from a first edge of the active area and adjacent to a second edge of the active area. A portion of the pocket is positioned between the access region and the first edge and forms a first plate; an insulating region extends above the portion of said body, and a polysilicon region extends above the insulating region and forms a second plate. A portion of the polysilicon region extends above the field insulating layer, parallel to the access region; a plurality of contacts are formed at a mutual distance along the portion of the polysilicon region extending above the field insulating layer.
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申请公布号 |
US2003072123(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20020251630 |
申请日期 |
2002.09.19 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
DEPETRO RICCARDO;MANZINI STEFANO |
分类号 |
H01L29/417;H01L29/94;(IPC1-7):H01G5/00 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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