发明名称 |
Method of forming a vertical field-effect transistor device |
摘要 |
It is proposed when forming field-effect transistor devices in a semiconductor substrate for the overlapping region of a source-drain region that is to be provided to be formed directly as a material region, in particular with outdiffusion processes being avoided to the greatest extent. This takes place in particular by forming the connection region or buried-strap region as selectively epitaxially grown-on single-crystal, possibly doped silicon.
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申请公布号 |
US2003073271(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20020272386 |
申请日期 |
2002.10.15 |
申请人 |
BIRNER ALBERT;GOLDBACH MATTHIAS |
发明人 |
BIRNER ALBERT;GOLDBACH MATTHIAS |
分类号 |
H01L21/8242;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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