Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer

摘要

The invention relates to a silicon germanium hetero bipolar transistor and a method of fabricating the epitaxial individual layers of a silicon germanium hetero bipolar transistor. Silicon germanium hetero bipolar transistors thus fabricated have an increased transit frequency, an increase maximum oscillation frequency and/or a reduced noise level depending upon requirements and intended application. A monocrystalline deposition is performed on a surface of pure silicon in accordance with the desired transistor profile. The silicon germanium hetero bipolar transistor contains an additional electrically inert material The semiconductor arrangement of silicon germanium hetero bbipolar transistors is fabricated by an epitaxy process. A electrically inert material incorporated into the epitaxial layer links fabrication defects and reduces the diffusion of the dopant. Thus, transistors for high frequency applications may be fabricated in two ways: The dopant dose of the base region is increased and/or the width of the base is reduced.