Semiconductor device having dummy patterns for metal CMP

摘要

A gate electrode (1) has a relatively long gate length (L) of e.g., about 10 mum. In a region immediately above the gate electrode (1) which is sandwiched between first-layer metals (1AL; 4, 5) provided is a metal dummy pattern (6) having a width (W:<L) in the first direction (D1) and extending in the second direction (D2) perpendicular to a direction of gate length (direction of current flow). Moreover, a geometric center of the metal dummy pattern (6) in the second direction (D2) is equal to a geometric center (GC) of the gate electrode (1) in the second direction (D2). This maintains the symmetry in shape of the metal dummy pattern (6) as viewed from the gate electrode (1). Such a structure can make deterioration in characteristics of a plurality of elements uniform while maintaining the essential effect of a metal CMP.