Verfahren zur Erzielung von fuer Transistoren, Detektoren od. dgl. geeigneten Oberflaechenzustaenden auf Halbleitern, beispielsweise Germanium mit Ausnahme von Selen,申请号DE1950S017706-传众专利搜索

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发明名称	Verfahren zur Erzielung von fuer Transistoren, Detektoren od. dgl. geeigneten Oberflaechenzustaenden auf Halbleitern, beispielsweise Germanium mit Ausnahme von Selen
摘要
申请公布号	DE968592(C)	申请公布日期	1958.03.06
申请号	DE1950S017706	申请日期	1950.07.15
申请人	SIEMENS & HALSKE AKTIENGESELLSCHAFT	发明人	GIESEKE DR. WALTER
分类号	H01L21/00;H01L21/263	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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