发明名称 Semiconductor device with temperature compensation circuit
摘要 <p>A semiconductor device is provided with temperature compensation functions and a temperature change detecting device is provided which detect temperature changes accurately, without requiring extra mounting space. A sensor unit (30) is composed of first semiconductor components (first-type resistors 30b and 30d) having a certain temperature coefficient and second semiconductor components (second-type resistors 30a and 30c) having a different temperature coefficient. They are located in the vicinity of a processing circuit (33) that needs temperature compensation. Changes in the temperature of the processing circuit (33) are detected by a temperature change detector (31) which observes a certain property (e.g., resistance) of the first and second semiconductor components constituting the sensor unit (30). A temperature corrector (32) corrects functions of the processing circuit (33) according to the detection result provided from the temperature change detector (31). <IMAGE></p>
申请公布号 EP1302832(A1) 申请公布日期 2003.04.16
申请号 EP20020252513 申请日期 2002.04.08
申请人 FUJITSU LIMITED 发明人 NANBA, HIROMI;MINOBE, KENICHI
分类号 G01K7/20;G01K7/24;G05D23/24;G06F1/20;H01L21/822;H01L27/04;H03J3/04;(IPC1-7):G05D23/24 主分类号 G01K7/20
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