Protection structure against electrostatic discharges (ESD) for an electronic device integrated on a SOI substrate and corresponding integration process

摘要

A protection structure against electrostatic discharges (ESD) for a semiconductor electronic device (20) that is integrated inside a well (2) is disclosed, wherein the well (2) is formed on a SOI substrate (3) and isolated dielectrically by a buried oxide layer (4) and an isolation structure, which isolation structure includes in turn at least a dielectric trench (7) filled with a filler material (8). Advantageously according to the invention, the protection structure (21) is formed at the isolation structure.