发明名称 LANGASITE SINGLE CRYSTAL INGOT, SUBSTRATE FOR PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURE THEREOF, AND SURFACE ACOUSTIC WAVE DEVICE
摘要 <p>The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pulling-up Langasite is within a range of +/-0.05% with respect to the target amounts at all measured locations, and because of having a superior homogeneity in the content of components over the entire ingot, when used, for example, in a piezoelectric device such as an surface acoustic wave filter, has properties for industrial application that contribute to the stabilization of characteristics as well as reducing the costs. &lt;IMAGE&gt;</p>
申请公布号 EP1302570(A1) 申请公布日期 2003.04.16
申请号 EP20000987694 申请日期 2000.12.21
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 WANG, SHOUQI;UDA, SATOSHI
分类号 C30B15/00;C30B29/34;H03H9/02;(IPC1-7):C30B29/34;H03H9/25;H03H3/08 主分类号 C30B15/00
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