METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR USING SUPERCONDUCTOR

摘要

PURPOSE: A method for fabricating a field effect transistor using a superconductor is provided to remove metallic components in MgO insulation layer on MgB2 superconductor to improve the quality of electrical insulation by performing a thermal process. CONSTITUTION: The first MgB2 superconducting layer is deposited on a substrate(10) and then a mask is formed on the whole surface of it. The superconducting layer is etched to form a superconducting layer pattern by using the photoresist pattern made by performing photolithography on the mask. After removing the mask, A source and drain electrode(12) are deposited on the superconducting layer pattern(11). The second MgB2 superconducting layer is deposited on the resultant structure and then oxidized under the temperature of 100 to 800 degree C. in oxygen atmosphere to form MgO gate insulating layer(15), on which a gate electrode(16) is deposited. The whole structure is thermally processed under the temperature of 100 to 800 in oxygen atmosphere.