| 发明名称 |
Method of manufacturing semiconductor device having silicon carbide film |
| 摘要 |
<p>A first film is formed on a semiconductor substrate, the first film (4) being made of material having a different etching resistance from silicon carbide. A second film of hydrogenated silicon carbide (5) is formed on the first film. A resist film (6) with an opening is formed on the second film. By using the resist mask as an etching mask, the second film is dry-etched by using mixture gas of fluorocarbon gas added with at least one of SF6 and NF3. The first film (4) is etched by using the second film (5) as a mask. A semiconductor device manufacture method is provided which utilizes a process capable of easily removing an etching stopper film or hard mask made of SiC. <IMAGE></p> |
| 申请公布号 |
EP1302981(A2) |
申请公布日期 |
2003.04.16 |
| 申请号 |
EP20020002111 |
申请日期 |
2002.01.28 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KOMADA, DAISUKE;KAKAMU, KATSUMI |
| 分类号 |
H01L21/3065;H01L21/28;H01L21/302;H01L21/311;H01L21/314;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3065 |
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