发明名称 |
Method of reducing stress-induced mechanical problems in optical-quality thin films |
摘要 |
<p>A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.</p> |
申请公布号 |
EP1302792(A2) |
申请公布日期 |
2003.04.16 |
申请号 |
EP20020257072 |
申请日期 |
2002.10.11 |
申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
OUELLET, LUC;LACHANCE, JONATHAN |
分类号 |
C23C16/56;C23C16/02;C23C16/40;G02B6/12;G02B6/124;G02B6/13;G02B6/136;(IPC1-7):G02B6/12;H01L21/20 |
主分类号 |
C23C16/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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