发明名称 Method of reducing stress-induced mechanical problems in optical-quality thin films
摘要 <p>A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.</p>
申请公布号 EP1302792(A2) 申请公布日期 2003.04.16
申请号 EP20020257072 申请日期 2002.10.11
申请人 DALSA SEMICONDUCTOR INC. 发明人 OUELLET, LUC;LACHANCE, JONATHAN
分类号 C23C16/56;C23C16/02;C23C16/40;G02B6/12;G02B6/124;G02B6/13;G02B6/136;(IPC1-7):G02B6/12;H01L21/20 主分类号 C23C16/56
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