Magneto-resistive element

摘要

The present invention provides a vertical current-type magnetoresistive element. The element includes an intermediate layer (106) and a pair of magnetic layers (105, 107) sandwiching the intermediate layer, and at least one of a free magnetic layer (105) and a pinned magnetic layer (107) is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 mu m<2>.