| 摘要 |
A method for in-situ removal of unwanted coating layers from a wafer surface by utilizing a magnetic field enhanced plasma is disclosed. The unwanted coating layers may include, but are not limited to, photoresist coating layers and sidewall passivation polymer layers. The magnetic field can be generated at a flux density between about 10 gauss and about 100 gauss. The wafer surface is exposed to the magnetic field enhanced plasma ions for a time period until substantially all the unwanted coating layers are removed, i.e., in a time period between about 1/2 minute and about 10 minutes. An oxygen plasma is used for demonstrating the method.
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