发明名称 |
Monolithic integrated circuit incorporating an inductive component and process for fabricating such an integrated circuit |
摘要 |
A monolithic integrated circuit (1) incorporating an inductive component (2) and comprising:a semiconductor substrate layer (2);a passivation layer (4) covering the substrate layer (2);metal contact pads (5) connected to the substrate (2) and passing through the passivation layer (4) in order to be flush with the upper face (6) of the passivation layer (4);which circuit also includes a spiral winding (20) which forms an inductor and lies in a plane parallel to the upper face (6) of the passivation layer (4), said winding (20) consisting of copper turns (21-23, 27, 28) having a thickness of greater than 10 microns, the winding ends forming extensions (12) which extend below the plane of the winding (20) and are connected to the contact pads (5).
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申请公布号 |
US6548365(B2) |
申请公布日期 |
2003.04.15 |
申请号 |
US20020177435 |
申请日期 |
2002.06.21 |
申请人 |
MEMSCAP S.A. AND PLANHEAD-SILMAG PHS, S.A. |
发明人 |
BASTERES LAURENT;MHANI AHMED;VALENTIN FRANCOIS;KARAM JEAN-MICHEL |
分类号 |
H01L21/822;H01F17/00;H01L21/02;H01L23/522;H01L27/04;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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