发明名称 Wiring substrate features having controlled sidewall profiles
摘要 A dielectric layer in a wiring substrate having a sloped sidewall. A photomask used to pattern the dielectric layer includes optical proximity features. The size and spacing of the optical proximity features are generally less than the resolution limit of the exposure tool used and do not print out on the layer. The optical proximity features provide a transition region between fully exposed material and un-exposed material, which results in a sloped sidewall of the photo-sensitive material after development. The sloped sidewall provides a more reliable thin film metal layer to contact through vias, and may be used to conserve wiring board area by allowing smaller via spacing.
申请公布号 US6548224(B1) 申请公布日期 2003.04.15
申请号 US20000519961 申请日期 2000.03.07
申请人 KULICKE & SOFFA HOLDINGS, INC. 发明人 CHEN TED T.;SKINNER MICHAEL P.
分类号 G03F1/14;H05K3/00;H05K3/46;(IPC1-7):G03F9/00 主分类号 G03F1/14
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