| 摘要 |
On a substrate, there is disposed a gate electrode having a section of a trapezoidal configuration expanded toward the substrate. The gate electrode is covered with a silicon nitride film having a thickness T1 of 400 Å, and a silicon oxide film having a thickness T2 of 1200 Åis formed on the silicon nitride film. A polycrystalline silicon film constructing an active region is formed on a gate insulating film constituted of the silicon nitride film and the silicon oxide film. By forming the silicon oxide film in a sufficient thickness of 1200 Åor more, and further forming the silicon nitride film 23 of 400 Åor more, a thin-film transistor cannot easily be influenced by a stepped portion formed by the gate electrode, and withstanding voltage of the gate insulating film of the thin-film transistor can be enhanced.
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