Semiconductor device and production process thereof

摘要

In the production of semiconductor devices, a surface of the portion corresponding to the chip packaging area of the glass substrate is treated with plasma in a vacuum, a silicon chip is bonded-through its surface opposed to an electrode-bearing surface of the same to the activated surface of the glass substrate, and a wiring pattern having a predetermined configuration is formed in such a manner that a conductor exposed from the glass substrate is connected with an electrode of the silicon chip.