| 发明名称 |
Structure and method for planar lateral oxidation in passive devices |
| 摘要 |
A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
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| 申请公布号 |
US6548908(B2) |
申请公布日期 |
2003.04.15 |
| 申请号 |
US19990473108 |
申请日期 |
1999.12.27 |
| 申请人 |
XEROX CORPORATION |
发明人 |
CHUA CHRISTOPHER L.;FLOYD PHILIP D.;PAOLI THOMAS L.;SUN DECAI |
| 分类号 |
G02B6/122;B81B1/00;G02B6/12;G02B6/13;G02B6/132;G02B6/136;H01L27/15;H01S5/183;H01S5/22;H01S5/223;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
G02B6/122 |
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