Semiconductor device and fabrication method thereof

摘要

A connection hole stopper film such as the silicon nitride film is formed to directly cover a lower interconnection. A lower interlayer insulation film is formed to directly cover that connection hole stopper film. An upper interlayer insulation film differing in etching property from the lower interlayer insulation film is formed to directly cover the lower interlayer insulation film. The upper interlayer insulation film is subjected to anisotropic etching, whereby an upper interconnection trench is formed. An upper interconnection is formed in that upper interconnection trench. A semiconductor device is obtained reduced in capacitance between interconnections and variation in the interconnection resistance.