发明名称 |
Method for fabricating semiconductor capacitor |
摘要 |
A method of fabricating a semiconductor capacitor is disclosed. An impurity layer is formed on a semiconductor substrate. An interlayer insulating film is disposed on an upper surface of the impurity layer and the semiconductor substrate. A contact hole is selectively etched through the interlayer insulating film to the impurity layer. A conductive plug is formed in the contact hole. A metal film pattern having an irregular surface area is disposed on the conductive plug. A dielectric substance film is located directly on the irregular surface of the metal film pattern. A metal electrode is formed on the dielectric substance film.
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申请公布号 |
US6548351(B2) |
申请公布日期 |
2003.04.15 |
申请号 |
US20010767263 |
申请日期 |
2001.01.23 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HWANG SOON-HONG |
分类号 |
H01L21/108;H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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