发明名称 |
Method of forming patterned thin film |
摘要 |
A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.
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申请公布号 |
US6548412(B2) |
申请公布日期 |
2003.04.15 |
申请号 |
US20020098316 |
申请日期 |
2002.03.18 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
FUDOJI HIROSHI;KOBAYASHI MIKIHIKO;SHINYA NORIO |
分类号 |
C23C18/06;C23C2/04;C23C18/12;C23C26/00;H01C17/06;H01G4/33;H01L21/316;(IPC1-7):H01L21/311;B05D7/00 |
主分类号 |
C23C18/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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