发明名称 Method of forming patterned thin film
摘要 A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.
申请公布号 US6548412(B2) 申请公布日期 2003.04.15
申请号 US20020098316 申请日期 2002.03.18
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 FUDOJI HIROSHI;KOBAYASHI MIKIHIKO;SHINYA NORIO
分类号 C23C18/06;C23C2/04;C23C18/12;C23C26/00;H01C17/06;H01G4/33;H01L21/316;(IPC1-7):H01L21/311;B05D7/00 主分类号 C23C18/06
代理机构 代理人
主权项
地址