发明名称 |
Method of forming a MIS capacitor |
摘要 |
Provided is a method of integrating Ta2O5 into an MIS stack capacitor for a semiconductor device by forming a thin SiON layer at the Si/TaO interface using low temperature remote plasma oxidation anneal. Also provided is a method of forming an MIS stack capacitor with improved electrical performance by treating SiO2 with remote plasma nitridation or SiN layer with rapid thermal oxidation or RPO to form a SiON layer prior to Ta2O5 deposition with TAT-DMAE, TAETO or any other Ta-containing precursor.
|
申请公布号 |
US6548368(B1) |
申请公布日期 |
2003.04.15 |
申请号 |
US20000644941 |
申请日期 |
2000.08.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NARWANKAR PRAVIN;RAJAGOPALAN RAVI |
分类号 |
H01L21/02;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|